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>10 GHz 2 µm Amplified InGaAs Photodetectors Data Sheet

>10 GHz 2 µm Amplified InGaAs Photodetectors

EOT’s >10 GHz 2 µm Amplified InGaAs Photodetedectors contain PIN photodiodes that utilize the photovoltaic effect to convert optical power into an electrical current and a fixed gain transimpedance amplifier allowing measurement of <1 mW input powers.  When terminated into 50 Ω into an oscilloscope, the pulsewidth of a laser can be measured.  When terminated into 50 Ω into a spectrum analyzer, the frequency response of a laser can be measured.  EOT’s >10 GHz 2 µm Amplified InGaAs Photodetectors come with their own wall plug-in power supply.  Plugging a coaxial cable into the photodetector’s SMA output connector and terminating into 50 Ω at the oscilloscope or spectrum analyzer is all that is required for operation.

Applications:

· Monitoring high repetition rate, externally modulated CW lasers

· Viewing <1 mW laser powers

Features:

· Built-in transimpedance amplifier

Specificationsa,b:

Part No. (Model)
120-10115-0001
(ET-5000A)
120-10116-0001
(ET-5000AF)
Rise Time
35ps
35ps
Conversion Gain
3250 V/W at 2000 nm
2350 V/W at 2000 nm
Power Supply
5 VDC
5 VDC
Bandwidth
20 kHz-10 GHz
20 kHz-10 GHz
Active Area Diameter 
40 µm
40 µm
Acceptance Angle (1/2 angle)
20⁰
N/A
Noise Equivalent Powerc
20 pW/√Hz at 2000 nm
25 pW/√Hz at 2000 nm
DC Monitor Output
1 mV/µA
1 mV/µA
Maximum Linear Rating
450 mVp-p
450 mVp-p
Mounting (Tapped Holes)
8-32 or M4
8-32 or M4
Output Connector
SMA
SMA
Fiber Optic Connectiond
N/A
FC/UPC

a Product specifications are subject to change.
b All specifications apply for a 50 Ω termination unless otherwise noted.
c Noise Equivalent Power (NEP) is determined via short circuit output.
Multi-mode fiber available. May limit bandwidth.        
Note: All products are RoHS compliant.